Fundamentals of Semiconductor Fabrication
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Fundamentals of Semiconductor Fabrication
May, Gary S.; Sze, Simon M.
John Wiley & Sons Inc
08/2007
320
Mole
Inglês
9780471232797
15 a 20 dias
585
Descrição não disponível.
Chapter 1. Introduction. Chapter 2. Crystal Growth.
Chapter 3. Silicon Oxidation.
Chapter 4. Photolithography.
Chapter 5. Etching.
Chapter 6. Diffusion.
Chapter 7. Ion Implantation.
Chapter 8. Film Deposition.
Chapter 9. Process Integration.
Chapter 10. IC Manufacturing.
Chapter 11. Future Trends and Challenges.
Appendix A: List of Symbols.
Appendix B: International System of Units (SI Units).
Appendix C: Unit Prefixes.
Appendix D: Greek Alphabet.
Appendix E: Physical Constants.
Appendix F: Properties of Si and GaAs at 300 K.
Appendix G: Some Properties of the Error Function.
Appendix H: Basic Kinetic Theory of Gases.
Appendix I: SUPREM Commands.
Appendix J: Running PROLITH.
Appendix K. Percentage Points of the t Distribution.
Appendix L: Percentage Points of the F Distribution.
Index.
Chapter 3. Silicon Oxidation.
Chapter 4. Photolithography.
Chapter 5. Etching.
Chapter 6. Diffusion.
Chapter 7. Ion Implantation.
Chapter 8. Film Deposition.
Chapter 9. Process Integration.
Chapter 10. IC Manufacturing.
Chapter 11. Future Trends and Challenges.
Appendix A: List of Symbols.
Appendix B: International System of Units (SI Units).
Appendix C: Unit Prefixes.
Appendix D: Greek Alphabet.
Appendix E: Physical Constants.
Appendix F: Properties of Si and GaAs at 300 K.
Appendix G: Some Properties of the Error Function.
Appendix H: Basic Kinetic Theory of Gases.
Appendix I: SUPREM Commands.
Appendix J: Running PROLITH.
Appendix K. Percentage Points of the t Distribution.
Appendix L: Percentage Points of the F Distribution.
Index.
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Chapter 1. Introduction. Chapter 2. Crystal Growth.
Chapter 3. Silicon Oxidation.
Chapter 4. Photolithography.
Chapter 5. Etching.
Chapter 6. Diffusion.
Chapter 7. Ion Implantation.
Chapter 8. Film Deposition.
Chapter 9. Process Integration.
Chapter 10. IC Manufacturing.
Chapter 11. Future Trends and Challenges.
Appendix A: List of Symbols.
Appendix B: International System of Units (SI Units).
Appendix C: Unit Prefixes.
Appendix D: Greek Alphabet.
Appendix E: Physical Constants.
Appendix F: Properties of Si and GaAs at 300 K.
Appendix G: Some Properties of the Error Function.
Appendix H: Basic Kinetic Theory of Gases.
Appendix I: SUPREM Commands.
Appendix J: Running PROLITH.
Appendix K. Percentage Points of the t Distribution.
Appendix L: Percentage Points of the F Distribution.
Index.
Chapter 3. Silicon Oxidation.
Chapter 4. Photolithography.
Chapter 5. Etching.
Chapter 6. Diffusion.
Chapter 7. Ion Implantation.
Chapter 8. Film Deposition.
Chapter 9. Process Integration.
Chapter 10. IC Manufacturing.
Chapter 11. Future Trends and Challenges.
Appendix A: List of Symbols.
Appendix B: International System of Units (SI Units).
Appendix C: Unit Prefixes.
Appendix D: Greek Alphabet.
Appendix E: Physical Constants.
Appendix F: Properties of Si and GaAs at 300 K.
Appendix G: Some Properties of the Error Function.
Appendix H: Basic Kinetic Theory of Gases.
Appendix I: SUPREM Commands.
Appendix J: Running PROLITH.
Appendix K. Percentage Points of the t Distribution.
Appendix L: Percentage Points of the F Distribution.
Index.
Este título pertence ao(s) assunto(s) indicados(s). Para ver outros títulos clique no assunto desejado.
