MOS (Metal Oxide Semiconductor) Physics and Technology

MOS (Metal Oxide Semiconductor) Physics and Technology

Nicollian, E. H.; Brews, J. R.

John Wiley & Sons Inc

12/2002

928

Mole

Inglês

9780471430797

15 a 20 dias

1350

Descrição não disponível.
Introduction.

Field Effect.

Metal Oxide Silicon Capacitor at Low Frequencies.

Metal Oxide Silicon Capacitor at Intermediate and High Frequencies.

Extraction of Interface Trap Properties from the Conductance.

Interfacial Nonuniformities.

Experimental Evidence for Interface Trap Properties.

Extraction of Interface Trap Properties from the Capacitance.

Measurement of Silicon Properties.

Charges, Barrier Heights, and Flatband Voltage.

Charge Trapping in the Oxide.

Instrumentation for Measuring Capacitor Characteristics.

Oxidation of Silicon--Oxidation Kinetics.

Oxidation of Silicon--Technology.

Control of Oxide Charges.

Models of the Interface.

Appendices.

Subject Index.

Symbol Index.
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